This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical. BSIM and IC simulation. Circuit simulation and compact models. BSIM – the beginning. BSIM3 – a compact model based on new MOSFET physics. : BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology).

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BSIM4 channel thermal noise models. BSIM4 – aimed for nm down to 20nm nodes. Gate intrinsic-input resistance for non-quasi-static modeling. Introduction and chapter objectives. Bibliography Includes bibliographical references and index. Imprint Singapore ; Hackensack, N.

Mosfte to search Skip to main content. Physical description xix, p. World Scientific Full view. Publication date Series International series on advances in solid state electronics and technology Reproduction Electronic reproduction.

Noise representations and parameters. Composite stamps for transient NQS model. World Scientific Publishing Co. Available to subscribing institutions. Charge and capacitance models.


Time discretization, equation linearization and matrix stamping. Velocity saturation and velocity overshoot. Describe the connection issue.

Review of the charge-deficit transient NQS model. Source and drain area and perimeter calculation. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. SearchWorks Catalog Stanford Libraries. BSIM4 diode charge and capacitance [4]. Source and drain parasitics: Circuit simulation and compact models. Gate direct-tunneling and body currents.

It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits.

Output resistance in saturation region. Channel DC current and output resistance.

BSIM4 and MOSFET Modeling For IC Simulation

Find it at other libraries via WorldCat Limited preview. ISBN electronic bk. Saturation junction leakage current and zero-bias capacitance models. Intrinsic charge and capacitance models.

Single continuous channel charge model.

BSIM – the beginning. Gate direct-tunneling current theory and model. Channel current in subthreshold and linear operations. Gate and channel geometries and materials. Source and modsling of a transistor with multiple gate fingers. Junction diode IV and CV models.


BSIM4 and MOSFET Modeling for IC Simulation – Weidong Liu, Chenming Hu – Google Books

BSIM4 junction leakage due to trap-assisted tunneling [4]. Nielsen Book Data Diode temperature-dependence model [4]. Connections of a multi-transistor stack. The intent of this book ch. Fringing and overlap capacitances.

Physical mechanisms of diode DC currents. BSIM4 flicker noise models. Responsibility Weidong Liu, Chenming Hu.

Source and drain contact scenarios and diffusion resistances. Series International series on advances in solid state electronics and technology.

Non-quasi-static and parasitic gate and body resistances. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.